Engineering Hall of Fame:
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The installation in 1981 of John Bardeen and Walter Brattain as IEEE
Honorary Members.
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Celebrating
the Centennial of the Birth of Nobel Physicist Walter Brattain
(10
February 1902 - 13 October 1987)
by
Frederik Nebeker
Nobel Physicist
Walter Houser Brattain was born on 10 February 1902 in Amoy, China,
where his father worked as a teacher. Not long after his birth, his
family returned to the United States, settling on a ranch in Tonasket,
Washington. Brattain graduated from Whitman College (Wash.) in 1924,
received a master's degree from the University of Oregon, and earned a
Ph.D. from the University of Minnesota in 1929. After spending almost
a year at the National Bureau of Standards, he moved to Bell Telephone
Laboratories in 1929, where he would stay until he retired.
Along with
Bell Labs colleague Joseph Becker, Brattain worked on thermal emission of
electrons, which improved the performance of electron tubes, before
moving on to work on copper-oxide rectifiers. In the 1930s, Bell Labs
took a keen interest in such semiconductors as copper oxide. Used
primarily in crystal radios, these semiconductors' properties were
well known. It seemed, however, that they had several other uses as
well, including being used for temperature-dependent resistance.
Electronics remained almost entirely dependent upon electron tubes,
and these semiconductors played an important role as amplifiers.
Becker and Brattain were among those who suggested that it might be
possible to design a solid-state amplifier, even though previous
attempts made to build such a device had failed.
During World War II,
Brattain's work focused on sensitive magnetometers to detect
submarines and on infrared detectors for use in bombsights. But after
the war, William Shockley, together with the chemist Stanley Morgan,
headed a Bell Labs group on solid-state physics. Shockley was
determined to build a solid-state amplifier, and Brattain eagerly joined
the effort — as did the promising young physicist, John Bardeen.
Brattain focused on understanding the surface properties of semiconductors.
Shortly before Christmas 1947, he and Bardeen ultimately succeeded in obtaining amplification with what became
known as a point-contact transistor. Bell Labs announced the invention
publicly in June 1948. While the announcement attracted little
interest — the New York Times gave it a few paragraphs
under "News of Radio" deep within the paper — Brattain,
Bardeen and Shockley were honored with the Nobel Prize for Physics as
the inventors of the transistor just eight years later.
Brattain continued
his investigations of the surface properties of semiconductors. He
also contributed to the biophysics disciplines with his models of
cell surfaces. He remained almost four decades at Bell Labs before
retiring in 1967. He then served as an adjunct professor at his alma
mater, Whitman College, until 1972. Brattain died in Seattle on 13
October 1987.
Frederik Nebeker
is Senior Research Historian at the IEEE History Center at Rutgers
University in New Brunswick, N.J. Visit the IEEE History Center's Web page at:
www.ieee.org/organizations/history_center/. |